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insulated gate bipolar transistor with ultrafast soft recovery diode

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v ces = 600v i c = 90a, t c = 100c t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.70v @ i c = 75a to-247ac IRGP4690DPBF to-247ad irgp4690d-ep g c e c g c e c e g n-channel c gc e gate collector emitter applications ? industrial motor drive ? inverters ? ups ? welding features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce (on) temperature coefficient excellent current sharing in parallel operation 5 s short circuit soa enables short circuit protection scheme lead-free, rohs compliant environmentally friendly form quantity IRGP4690DPBF to-247ac tube 25 IRGP4690DPBF irgp4690d-epbf to-247ad tube 25 irgp4690d-epbf base part number package type standard pack orderable part number absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 140 i c @ t c = 100c continuous collector current 90 i cm pulse collector current, v ge = 15v 225 i lm clamped inductive load current, v ge = 20v 300 a i f @ t c = 25c diode continous forward current 70 i f @ t c = 100c diode continous forward current 45 i fm diode maximum forward current 300 v ge continuous gate-to-emitter voltage 20 transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 454 p d @ t c = 100c maximum power dissipation 227 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ) ) ??? ??? 0.33 r jc (diode) junction-to-case (diode) ??? ??? 1.0 r cs case-to-sink (flat, greased surface) ??? 0.24 ??? r ) /

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notes: v cc = 80% (v ces ), v ge = 20v, l = 10 h, r g = 10 . r is measured at t j of approximately 90c. refer to an-1086 for guidelines for measuring v (br)ces safely. pulse width limited by max. junction temperature.

electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100 a v (br)ces / / ) ) ) ) / / ) s i ces collector-to-emitter leakage current ? 1.0 100 av ge = 0v, v ce = 600v ? 1040 ? v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 2.23 3.0 v i f = 75a ?1.8? i f = 75a, t j = 175c i ges gate-to-emitter leakage current ? ? 200 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ? 150 ? i c = 75a q ge gate-to-emitter charge ? 40 ? nc v ge = 15v q gc gate-to-collector charge ? 60 ? v cc = 400v e on turn-on switching loss ? 2465 ? e off turn-off switching loss ? 2155 ? ji c = 75a, v cc = 400v, v ge = 15v e total total switching loss ? 4620 ? r g = 10 , l = 200 h, t j = 25c t d(on) turn-on delay time ? 50 ? energy losses include tail & diode t r rise time ? 70 ? ns reverse recovery t d(off) turn-off delay time ? 200 ? t f fall time ? 60 ? e on turn-on switching loss ? 3870 ? e off turn-off switching loss ? 2815 ? ji c = 75a, v cc = 400v, v ge =15v e total total switching loss ? 6685 ? r g =10 h,t j = 175c t d(on) turn-on delay time ? 50 ? energy losses include tail & diode t r rise time ? 70 ? ns reverse recovery t d(off) turn-off delay time ? 240 ? t f fall time ? 70 ? c ies input capacitance ? 4440 ? pf v ge = 0v c oes output capacitance ? 245 ? v cc = 30v c res reverse transfer capacitance ? 130 ? f = 1.0mhz t j = 175c, i c = 300a rbsoa reverse bias safe operating area full square v cc = 480v, vp sv cc = 400v, vp jt j = 175c t rr diode reverse recovery time ? 155 ? ns v cc = 400v, i f = 75a i rr peak reverse recovery current ? 27 ? a v ge = 15v, rg = 10 h conditions

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fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 60 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 60 s 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 120 140 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10 sec 100 sec tc = 25c tj = 175c single pulse dc 1msec

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fig. 7 - typ. igbt output characteristics t j = 175c; tp = 60 s fig. 8 - typ. diode forward characteristics tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 60 s fig. 9 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 4 6 8 1012141618 v ge, gate-to-emitter voltage (v) 0 50 100 150 200 250 300 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 175c t j = 25c 0.0 1.0 2.0 3.0 4.0 v f (v) 0 50 100 150 200 250 300 i f ( a ) -40c 25c 175c

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fig. 16 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 75a; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 75a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 25 50 75 100 125 150 i c (a) 0 2000 4000 6000 8000 10000 12000 e n e r g y ( j ) e off e on 0 50 100 150 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 255075100 rg ( ) 1000 3000 5000 7000 9000 11000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 120 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 20 40 60 80 100 120 140 160 i f (a) 10 15 20 25 30 35 i r r ( a ) r g = 100 r g = 5.0 r g = 10 r g = 47 0 20 40 60 80 100 r g ( ) 15 20 25 30 i r r ( a )

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fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 75a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 75a; l = 485 h fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 10 20 30 40 50 60 70 i f (a) 100 150 200 250 300 350 400 e n e r g y ( j ) r g = 100 r g = 47 r g = 22 r g = 10 8 1012141618 v ge (v) 0 5 10 15 20 t i m e ( s ) 0 200 400 600 800 c u r r e n t ( a ) t sc i sc 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 200 300 400 500 600 700 di f /dt (a/ s) 15 20 25 30 i r r ( a ) 200 300 400 500 600 700 di f /dt (a/ s) 1500 2000 2500 3000 q r r ( n c ) 5.0 10 100 47 75a 150a 38a 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres

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fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.00738 0.000009 0.09441 0.000179 0.13424 0.002834 0.09294 0.0182 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.02738 0.000053 0.34077 0.000485 0.41380 0.005203 0.22819 0.034407

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fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit dc 4x dut vcc scsoa fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v

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fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -100 0 100 200 300 400 500 600 700 -3 0 3 6 9 12 time (us) vce (v) -100 0 100 200 300 400 500 600 700 i ce (a) vce ice -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 -0.20 -0.10 0.00 0.10 0.20 0.30 0.40 time ( s) v f (v) peak i rr t rr q rr -100 0 100 200 300 400 500 600 -0.4 -0.2 0.0 0.2 0.4 0.6 time( s) v ce (v) -20 0 20 40 60 80 100 120 i ce (a) 90% i ce 5% v ce 5% i ce eof f lo s s tf -100 0 100 200 300 400 500 600 7.67.88.08.2 time ( s) v ce (v) -20 0 20 40 60 80 100 120 i ce (a) test current 90% i ce 5% v ce 1 0% i ce tr eon loss

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to-247ac package is not recommended for surface mount application. year 1 = 2001 dat e code part number international logo rectifier as s e mb l y 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" we e k 35 lot code in the assembly line "h" as s e mbled on ww 35, 2001 note: "p" in as s embly line pos ition example: wi t h as s e mb l y t his is an irfpe30 lot code 5657

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to-247ad package is not recommended for surface mount application. assembly year 0 = 2000 as s embled on ww 35, 2000 in the assembly line "h" example: t his is an irgp30b120kd-e lot code 5657 with assembly part number dat e code international rectifier logo 035h 56 57 week 35 line h lot code note: "p" in as sembly line position i ndi cates "l ead- f r ee"

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ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ?
qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ??
highest passing voltage. qualification information ? moisture sensitivity level to-247ac n/a to-247ad n/a esd qualification level industrial (per international rectifier?s internal guidelines) rohs compliant yes human body model class 3a (+/- 4000v ) ?? (per jedec jesd22-a114) charged device model class c5 (+/- 1125v ) ?? (per jedec jesd22-c101) date comments ? to i fm diode maximum forward current on page 1. ? added note to switching losses test condition on page 2. revision history 11/14/2014

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